1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2SB624 transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : -0.7 a collector-base voltage v (br)cbo : -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100 a, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =-30 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a h fe(1) * v ce = -1v, i c = -100ma 110 400 dc current gain h fe(2) * v ce =-1v, i c = -700ma 50 collector-emitter saturation voltage v ce(sat) * i c =-700 ma, i b = -70ma -0.6 v base-emitter voltage v be(on) * v ce =-6v, i c =-10ma -0.6 -0.7 v transition frequency f t v ce = -6v, i c = -10ma 140 mhz * pulse test : pulse width 350s,duty cycle 2%. classification of h fe (1) marking bv1 bv2 bv3 bv4 bv5 range 110-180 135-220 170-270 200-320 250-400 sot-23-3l 1. base 2. emitter 3. collector 2SB624 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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